PART |
Description |
Maker |
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
CM75TU-12F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 75 Amperes/600 Volts Trench Gate Design Six IGBTMOD 75 Amperes/600 Volts Trench Gate Design Six IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors] Powerex, Inc.
|
CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
FDMC8360L |
N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m
|
Fairchild Semiconductor
|
IXTQ50N25T IXTP50N25T IXTA50N25T IXTH50N25T |
Trench Gate Power MOSFET N-Channel Enhancement Mode
|
IXYS Corporation
|
SFF80N10Z SFF80N10M |
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET
|
http:// SSDI[Solid States Devices, Inc]
|
IXFH21N50 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.25惟??娌??澧?己??HiPerFET???MOSFET)
|
IXYS CORP
|
FS75R07N2E4 FS75R07N2E4-13 |
Dual channel IGBT gate driver EconoPACK2 Modul mit Trench
|
Infineon Technologies AG Infineon Technologies A...
|
CM100TJ-24F |
128 x 64 pixel format, LED or EL Backlight available Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
IXTP76N25T IXTH76N25T IXTI76N25T |
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode
|
IXYS Corporation
|
IXFH50N20 IXFH10N65 IXFH10N60 IXFH11N100 IXFH11N60 |
HIPERFET Power MOSFTETs 42 A, 200 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HIPERFET Power MOSFTETs HIPERFET电力MOSFTETs RES, FILM, 1.33K, 1%, .100W, 100PPM, 0805
|
IXYS, Corp. http:// IXYS[IXYS Corporation]
|